to-2 52-2l plastic-encapsulate mosfets cj u 05n60b n-channel power mosfet general description this advanced high voltage mosfet is designed to stand high energy in the avalanche mode an d switch efficiently. this new high energy device also offers a drain-to-source diode fast recovery time. desighed for high voltage, high speed switching applications such as power supp lies, converters, power motor controls and bridge circuits. feature z high current rating z lower r ds(on) z lower capacitance z lower total gate charge z tighter v sd specifications z avalanche energy specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 600 gate-source voltage v gs 30 v continuous drain current i d 5 pulsed drain current i dm 20 a single pulsed avalanche energy (note1) e as 2 5 0 mj power dissipation p d 1.25 w thermal resistance from junction to ambient r ja 100 /w operating and storage temperature range t j, t stg -55 ~+150 maximum lead temperure for soldering purposes , duration 5 seconds t l 260 to-2 52-2l 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2014
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 600 drain-source diode forward voltage(note2) v sd v gs = 0v, i s =4.5a 1.4 v zero gate voltage drain current i dss v ds =600v, v gs =0v 1 a gate-body leakage curren (note2) i gss v ds =0v, v gs = 30v 100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =2.25a 2.5 ? dynamic characteristics (note 3) input capacitance c iss 670 output capacitance c oss 72 reverse transfer capacitance c rss v ds =25v,v gs =0v,f =1mhz 8.5 pf switching characteristics (note 3) turn-on delay time t d (on) 30 turn-on rise time t r 90 turn-off delay time t d(off) 85 turn-off fall time t f v dd =300v, v gs =10v, r g =25 ? , i d =4.5a 100 ns notes : 1. l= 16 mh, i l =5a, v dd =50v, ,r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2014
0 4 8 12 16 20 0 2 4 6 8 01234567 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0246810 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1e-3 0.01 0.1 1 10 24681012 0 2 4 6 8 10 12 25 50 75 100 125 0 1 2 3 4 5 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) v gs =5.5v v gs = 6v 8v 10v v gs =5v v gs =4.5v v ds =10v pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 cj u 05n60b pulsed i d =2.25a on-resistance r ds(on) ( ) gate to source voltage v gs (v) v gs ?? r ds(on) t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2014
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